JPH0458706B2 - - Google Patents
Info
- Publication number
- JPH0458706B2 JPH0458706B2 JP59219830A JP21983084A JPH0458706B2 JP H0458706 B2 JPH0458706 B2 JP H0458706B2 JP 59219830 A JP59219830 A JP 59219830A JP 21983084 A JP21983084 A JP 21983084A JP H0458706 B2 JPH0458706 B2 JP H0458706B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- barrier
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59219830A JPS6197966A (ja) | 1984-10-19 | 1984-10-19 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59219830A JPS6197966A (ja) | 1984-10-19 | 1984-10-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6197966A JPS6197966A (ja) | 1986-05-16 |
JPH0458706B2 true JPH0458706B2 (en]) | 1992-09-18 |
Family
ID=16741708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59219830A Granted JPS6197966A (ja) | 1984-10-19 | 1984-10-19 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6197966A (en]) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS627159A (ja) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | 半導体装置 |
JPS6340369A (ja) * | 1986-08-05 | 1988-02-20 | Nec Corp | ホツト・エレクトロン・トランジスタ |
US4967254A (en) * | 1987-07-16 | 1990-10-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5436192A (en) * | 1989-03-24 | 1995-07-25 | Xerox Corporation | Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS579224B2 (en]) * | 1973-01-24 | 1982-02-20 | ||
JPS5039076A (en]) * | 1973-08-08 | 1975-04-10 | ||
US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
-
1984
- 1984-10-19 JP JP59219830A patent/JPS6197966A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6197966A (ja) | 1986-05-16 |
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